| 发明名称 |
SURFACE MACHINING METHOD FOR SINGLE CRYSTAL SIC SUBSTRATE, MANUFACTURING METHOD THEREOF, AND GRINDING PLATE FOR SURFACE MACHINING SINGLE CRYSTAL SIC SUBSTRATE |
| 摘要 |
A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad. |
| 申请公布号 |
US2016035579(A1) |
申请公布日期 |
2016.02.04 |
| 申请号 |
US201414765875 |
申请日期 |
2014.02.13 |
| 申请人 |
SHOWA DENKO K.K. |
发明人 |
KIDO Takanori;KATO Tomohisa |
| 分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A surface machining method for a single crystal SiC substrate, comprising:
a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad. |
| 地址 |
Minato-ku, Tokyo JP |
