发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured. |
申请公布号 |
US2016035567(A1) |
申请公布日期 |
2016.02.04 |
申请号 |
US201514878399 |
申请日期 |
2015.10.08 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
SATO Takahiro;NAKAZAWA Yasutaka;CHO Takayuki;KOSHIOKA Shunsuke;TOKUNAGA Hajime;JINTYOU Masami |
分类号 |
H01L21/02;H01L21/306;H01L27/12;H01L29/66 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-Shi JP |