发明名称 MULTI-LAYERED ALUMINUM OXIDE CAPACITOR
摘要 The present invention relates to a multi-layered aluminum oxide capacitor comprising an aluminum substrate; a plurality of aluminum oxide layer formed in at least a portion of on both sides or one side of the substrate with respect to the aluminum substrate; and a plurality of electrode layers formed on the aluminum oxide layers. According to the present invention, manufacturing process is more simplified since Al2O3 insulation layer is formed by anodizing the aluminum layer without forming an extra insulation layer after forming the aluminum layer, so that the manufacturing cost can be reduced, and also a multi-layered capacitor having a high capacitance and a high reliability can be provided by stacking capacitors comprising a plurality of aluminum oxide layers using a more simplified process according to the present invention.
申请公布号 US2016035489(A1) 申请公布日期 2016.02.04
申请号 US201514816182 申请日期 2015.08.03
申请人 POINT ENGINEERING CO., LTD. 发明人 AHN Bum Mo;PARK Seung Ho
分类号 H01G4/10;H01G4/248;H01G4/008 主分类号 H01G4/10
代理机构 代理人
主权项 1. A multi-layered aluminum oxide capacitor comprising: an aluminum substrate; at least one aluminum oxide layer formed on at least a portion of both sides or one side of the aluminum substrate; and an electrode layer formed on the aluminum oxide layer.
地址 Asan-si KR