发明名称 BANK CONTROL CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME
摘要 A bank control circuit includes an implicit signal generation unit suitable for activating an implicit signal when a first active signal corresponding to a bank which is in an activated state bank, among a plurality of banks; and a delay unit suitable for delaying the implicit signal by a predetermined time, wherein the bank corresponding to the first active signal is precharged based on the implicit signal and activated again based on the delayed implicit signal.
申请公布号 US2016035400(A1) 申请公布日期 2016.02.04
申请号 US201414572189 申请日期 2014.12.16
申请人 SK hynix Inc. 发明人 LEE Hyun-Sung
分类号 G11C8/18;G11C8/12;G11C8/08;G11C8/10;G11C8/06 主分类号 G11C8/18
代理机构 代理人
主权项 1. A bank control circuit, comprising: an implicit signal generation unit suitable for activating an implicit signal when a first active signal corresponding to a bank which is in an activated state, among a plurality of banks; and a delay unit suitable for delaying the implicit signal by a predetermined time, wherein the bank corresponding to the first active signal is precharged based on the implicit signal and activated again based on the delayed implicit signal.
地址 Gyeonggi-do KR
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