| 摘要 |
This photoelectric conversion element comprises a bottom electrode, a charge blocking layer for suppressing charge injection from the bottom electrode, an organic layer including a photoelectric conversion layer, and a top electrode including a transparent electrode layer, laminated in that order on a substrate. The photoelectric conversion layer is composed of an amorphous film, and has a bulk hetero-structure of a P-type organic semiconductor and an N-type organic semiconductor comprising fullerene. The difference between the ionization potential of the photoelectric conversion layer having the bulk hetero-structure and the electron affinity of the N-type semiconductor is 1.30 eV or greater. |
