| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an AlN single crystal that suppresses the AlN single crystal from cracking.SOLUTION: There is provided a method of manufacturing an AlN single crystal in which the AlN single crystal 6 is grown on a base material 5 by a sublimation re-crystallization method, and the base material 5 has a growth surface 54 where the AlN single crystal 6 is grown, the growth surface 54 comprising TaC. The base material 5 preferably has a parent material 51 comprising Ta, a first layer comprising Ta2C, covering the parent material 5, and constituting the growth surface 54, and a second layer 53 comprising TaC and covering the first layer 52 except the growth surface 54, and the growth surface 54 of the base material 5 where the AlN single crystal 6 is grown comprises Ta2C having a larger coefficient of thermal expansion than AlN, so when the AlN single crystal 6 having been grown on the base material 5 is cooled, tension stress is prevented from acting on the AlN single crystal 6, which is suppressed from cracking.SELECTED DRAWING: Figure 2 |
