| 摘要 |
PROBLEM TO BE SOLVED: To inhibit excessive leaning of a top face of a side wall film.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a processed layer on a semiconductor substrate; a process of sequentially forming a first organic film and a second organic film on the processed layer; a process of forming a first mask film composed of a third organic film on the second organic film; a first etching process of etching the second organic film by using the first mask film as a mask to form second mask films each having a first width; a second etching process of continuously etching the first organic film to form third mask films each of which has the first width and lateral faces exposed; a third etching process of degenerating the lateral faces of the third mask films to form fourth mask films each having a second width; a process of forming a sacrificial film on a whole area in such a way as to cover the entire surfaces of the second mask films and the fourth mask films; a process of etching back the entire surface of the sacrificial film to form side wall films contacting lateral faces of the fourth mask films; and a process of removing the fourth mask films.SELECTED DRAWING: Figure 5 |
