THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF

摘要

A thin film transistor array panel is provided. A thin film transistor is positioned on a substrate. A first passivation layer is positioned on the thin film transistor. A common electrode is positioned on the first passivation layer. A second passivation layer positioned on the common electrode. A pixel electrode is positioned on the second passivation layer. The pixel electrode is coupled to the thin film transistor through a first contact hole penetrating the first passivation layer, the common electrode, and the second passivation layer. A first part of the first contact hole formed in the common electrode is larger than a second part of the first contact hole formed in the second passivation layer.

主权项

1. A thin film transistor array panel, comprising:
a substrate; a thin film transistor positioned on the substrate; a first passivation layer positioned on the thin film transistor; a common electrode positioned on the first passivation layer; a second passivation layer positioned on the common electrode; and a pixel electrode positioned on the second passivation layer and coupled to the thin film transistor through a first contact hole, wherein the first contact hole penetrates the first passivation layer, the common electrode, and the second passivation layer, and wherein a first part of the first contact hole formed in the common electrode is larger than a second part of the first contact hole formed in the second passivation layer.