PLANARIZATION METHOD, SUBSTRATE TREATMENT SYSTEM, MRAM MANUFACTURING METHOD, AND MRAM ELEMENT

摘要

Provided is a planarization method capable of reliably planarizing a metal film formed before an MTJ element of an MRAM is formed. An MTJ element is formed by a sequence of processes including: forming a Cu film to be embedded in a SiO2 film in a wafer W; irradiating an oxygen GCIB to a surface of the Cu film to planarize the Cu film; forming a Ta film; forming a Ru film or a Ta film; irradiating the oxygen GCIB to the Ta film, the Ru film or the Ta film to planarize the Ta film, the Ru film or the Ta film; forming a PtMn film; irradiating the oxygen GCIB to a surface of the PtMn film to planarize the PtMn film; forming a CoFe thin film and a Ru thin film; and forming a CoFeB thin film, a MgO thin film and a CoFeB thin film in that order.

主权项

1. A planarization method, comprising:
irradiating an oxygen GCIB (gas cluster ion beam) to a metal film formed on a substrate, the metal film being formed before an MTJ (Magnetic Tunnel Junction) element of an MRAM (Magnetoresistive Random Access Memory) is formed.