发明名称 |
DATA STORAGE DEVICE AND OPERATION METHOD THEREOF |
摘要 |
A data storage device includes a nonvolatile memory having a plurality of first memory cells connected to a first word line and a plurality of second memory cells connected to a second word line. A memory controller divides first data to be programmed in the first memory cells into first and second data groups and divides second data to be programmed in the second memory cells into third and fourth data groups. The nonvolatile memory device performs a third program operation of the second data group and a fourth program operation of the fourth data group after sequentially performing a first program operation of the first data group and a second program operation of the third data group. |
申请公布号 |
US2016035427(A1) |
申请公布日期 |
2016.02.04 |
申请号 |
US201514797203 |
申请日期 |
2015.07.13 |
申请人 |
YU JAE-DUK;KIM CHUL BUM;KANG DONGKU |
发明人 |
YU JAE-DUK;KIM CHUL BUM;KANG DONGKU |
分类号 |
G11C16/10 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
1. A data storage device comprising:
a nonvolatile memory comprising a plurality of first memory cells connected to a first word line and a plurality of second memory cells connected to a second word line; and a memory controller dividing first data to be programmed in the first memory cells into first and second data groups and dividing second data to be programmed in the second memory cells into third and fourth data groups, wherein: the nonvolatile memory sequentially performs a third program operation of the second data group and then a fourth program operation of the fourth data group after sequentially performing a first program operation of the first data group and then a second program operation of the third data group, the first data group is programmed in first selection memory cells among the first memory cells and the second data group is programmed in second selection memory cells different from the first selection memory cells among the first memory cells, and the third data group is programmed in third selection memory cells among the second memory cells and the fourth data group is programmed in fourth selection memory cells different from the third selection memory cells among the second memory cells. |
地址 |
SEOUL KR |