SEMICONDUCTOR PHOTOCATALYST AND ARTIFICIAL PHOTONIC SYNTHESIS DEVICE HAVING THE SAME

摘要

A semiconductor photocatalyst includes first and second layers made of first and second materials, respectively. Band gaps of the first and second materials are equal to or smaller than 1.5 eV and 2.5 eV, respectively. A lower electric potential of a conduction band of the second material is disposed on a positive side from the first material. An upper electric potential of a valence band of the second material is disposed on a positive side from the first material and from an oxidation electric potential of water when the first and second layers are bonded to each other in the hetero junction manner. The lower electric potential of the conduction band of the first layer is disposed on a negative side from a reduction electric potential of hydrogen when the first and second layers are bonded to each other in the hetero junction manner.

主权项

1. A semiconductor photocatalyst comprising:
a first layer made of a first material having a band gap equal to or smaller than 1.5 eV; and a second layer made of a second material having a band gap equal to or smaller than 2.5 eV, wherein the band gap of the second material is larger than the first material, wherein a lower electric potential of a conduction band of the second material is disposed on a positive side from a lower electric potential of a conduction band of the first material, wherein an upper electric potential of a valence band of the second material is disposed on a positive side from an upper electric potential of a valence band of the first material, wherein the first layer and the second layer are bonded to each other in a hetero junction manner, wherein the upper electric potential of the valence band of the second layer is disposed on a positive side from an oxidation electric potential of water under a condition that the first layer and the second layer are bonded to each other in the hetero junction manner, and wherein the lower electric potential of the conduction band of the first layer is disposed on a negative side from a reduction electric potential of hydrogen under a condition that the first layer and the second layer are bonded to each other in the hetero junction manner.