发明名称 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
摘要 A plasma processing apparatus includes a first electrode, a second electrode disposed to face the first electrode, a chamber, a first high-frequency power supply, a direct-current power supply, and a gas supply source. The plasma processing apparatus generates first plasma to form a film of a reaction product on the second electrode by causing the first high-frequency power supply to supply first high-frequency power to the second electrode and causing the gas supply source to supply a first gas into the chamber; and generates second plasma to sputter the film of the reaction product by causing the first high-frequency power supply to supply the first high-frequency power to the second electrode, causing the direct-current power supply to supply direct-current power to the second electrode, and causing the gas supply source to supply a second gas into the chamber.
申请公布号 US2016032445(A1) 申请公布日期 2016.02.04
申请号 US201514799650 申请日期 2015.07.15
申请人 Tokyo Electron Limited 发明人 KIHARA Yoshihide;HONDA Masanobu;HISAMATSU Toru
分类号 C23C14/34;H01J37/34;C23C14/06 主分类号 C23C14/34
代理机构 代理人
主权项 1. A plasma processing apparatus, comprising: a first electrode on which a substrate is placed; a second electrode that is disposed to face the first electrode across a predetermined gap; a chamber that houses the first electrode and the second electrode; a first high-frequency power supply that supplies first high-frequency power to the second electrode; a direct-current power supply that supplies direct-current power to the second electrode; and a gas supply source, wherein the plasma processing apparatus is configured to generate first plasma to form a film of a reaction product on the second electrode by causing the first high-frequency power supply to supply the first high-frequency power to the second electrode and causing the gas supply source to supply a first gas into the chamber, andgenerate second plasma to sputter the film of the reaction product on the second electrode by causing the first high-frequency power supply to supply the first high-frequency power to the second electrode, causing the direct-current power supply to supply the direct-current power to the second electrode, and causing the gas supply source to supply a second gas into the chamber.
地址 Tokyo JP