发明名称 |
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD |
摘要 |
A plasma processing apparatus includes a first electrode, a second electrode disposed to face the first electrode, a chamber, a first high-frequency power supply, a direct-current power supply, and a gas supply source. The plasma processing apparatus generates first plasma to form a film of a reaction product on the second electrode by causing the first high-frequency power supply to supply first high-frequency power to the second electrode and causing the gas supply source to supply a first gas into the chamber; and generates second plasma to sputter the film of the reaction product by causing the first high-frequency power supply to supply the first high-frequency power to the second electrode, causing the direct-current power supply to supply direct-current power to the second electrode, and causing the gas supply source to supply a second gas into the chamber. |
申请公布号 |
US2016032445(A1) |
申请公布日期 |
2016.02.04 |
申请号 |
US201514799650 |
申请日期 |
2015.07.15 |
申请人 |
Tokyo Electron Limited |
发明人 |
KIHARA Yoshihide;HONDA Masanobu;HISAMATSU Toru |
分类号 |
C23C14/34;H01J37/34;C23C14/06 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
1. A plasma processing apparatus, comprising:
a first electrode on which a substrate is placed; a second electrode that is disposed to face the first electrode across a predetermined gap; a chamber that houses the first electrode and the second electrode; a first high-frequency power supply that supplies first high-frequency power to the second electrode; a direct-current power supply that supplies direct-current power to the second electrode; and a gas supply source, wherein the plasma processing apparatus is configured to
generate first plasma to form a film of a reaction product on the second electrode by causing the first high-frequency power supply to supply the first high-frequency power to the second electrode and causing the gas supply source to supply a first gas into the chamber, andgenerate second plasma to sputter the film of the reaction product on the second electrode by causing the first high-frequency power supply to supply the first high-frequency power to the second electrode, causing the direct-current power supply to supply the direct-current power to the second electrode, and causing the gas supply source to supply a second gas into the chamber. |
地址 |
Tokyo JP |