| 摘要 |
The present invention is a method for producing a quartz glass crucible for pulling a single crystal silicon from a silicon melt held within the quartz glass crucible, said method comprising: a step for forming a quartz glass crucible having an outer layer that is formed of opaque quartz glass containing air bubbles and an inner layer that is formed of transparent quartz glass not substantially containing air bubbles; a step for subjecting a region of the inner surface of the thus-formed quartz glass crucible to surface roughening, said region being in contact with a silicon melt when the silicon melt is held within the quartz glass crucible; and a step for crystallizing the surface of the region, which has been subjected to surface roughening, by subjecting the quartz glass crucible, the inner surface of which has been subjected to surface roughening, to a heat treatment. Consequently, it becomes possible to produce a quartz glass crucible for single crystal silicon pulling, which effectively suppresses the formation of a brown ring on the inner surface of the crucible during the single crystal silicon pulling, and which is capable of suppressing disturbance of crystallinity of a single crystal silicon. |
