发明名称 Vanadium oxide thermo-sensitive film material with high temperature coefficient of resistance and a preparing method thereof
摘要 A vanadium oxide thermo-sensitive film material with a high temperature coefficient of resistance (TCR) contains a rare earth element of Yttrium serving as a dopant in a preparation process. The vanadium oxide thermo-sensitive film material includes a substrate and a yttrium-doped vanadium oxide film layer. The yttrium-doped vanadium oxide film layer includes three elements of vanadium, oxygen and yttrium, wherein the atomic concentration of yttrium is at a range of 1%-8%, the atomic concentration of vanadium is at a range of 20-40% and the residue is oxygen. The method for preparing the vanadium oxide thermo-sensitive film material with high TCR includes a reactive magnetron sputtering method using a low-concentration yttrium-vanadium alloy target as a sputtering source or a reactive magnetron co-sputtering method using dual targets including a high-concentration yttrium-vanadium alloy target and a pure vanadium target as a co-sputtering source.
申请公布号 US2016032443(A1) 申请公布日期 2016.02.04
申请号 US201514880148 申请日期 2015.10.09
申请人 University of Electronic Science and Technology of China 发明人 Gu Deen;Wang Tao;Jiang Yadong
分类号 C23C14/08;H01B1/02;C23C14/34;C23C14/35;C23C14/00 主分类号 C23C14/08
代理机构 代理人
主权项 1. A vanadium oxide thermo-sensitive film material with high temperature coefficient of resistance (TCR) containing a rare earth element of Yttrium serving as a dopant in a preparation process.
地址 Chengdu CN