发明名称 |
Vanadium oxide thermo-sensitive film material with high temperature coefficient of resistance and a preparing method thereof |
摘要 |
A vanadium oxide thermo-sensitive film material with a high temperature coefficient of resistance (TCR) contains a rare earth element of Yttrium serving as a dopant in a preparation process. The vanadium oxide thermo-sensitive film material includes a substrate and a yttrium-doped vanadium oxide film layer. The yttrium-doped vanadium oxide film layer includes three elements of vanadium, oxygen and yttrium, wherein the atomic concentration of yttrium is at a range of 1%-8%, the atomic concentration of vanadium is at a range of 20-40% and the residue is oxygen. The method for preparing the vanadium oxide thermo-sensitive film material with high TCR includes a reactive magnetron sputtering method using a low-concentration yttrium-vanadium alloy target as a sputtering source or a reactive magnetron co-sputtering method using dual targets including a high-concentration yttrium-vanadium alloy target and a pure vanadium target as a co-sputtering source. |
申请公布号 |
US2016032443(A1) |
申请公布日期 |
2016.02.04 |
申请号 |
US201514880148 |
申请日期 |
2015.10.09 |
申请人 |
University of Electronic Science and Technology of China |
发明人 |
Gu Deen;Wang Tao;Jiang Yadong |
分类号 |
C23C14/08;H01B1/02;C23C14/34;C23C14/35;C23C14/00 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
1. A vanadium oxide thermo-sensitive film material with high temperature coefficient of resistance (TCR) containing a rare earth element of Yttrium serving as a dopant in a preparation process. |
地址 |
Chengdu CN |