发明名称 |
BIASING A SILICON-ON-INSULATOR (SOI) SUBSTRATE TO ENHANCE A DEPLETION REGION |
摘要 |
A device includes a silicon-on-insulator (SOI) substrate comprising a bulk silicon (Si) substrate, a buried oxide layer over the bulk Si substrate and a silicon device layer over the buried oxide layer, a first substrate tap and a second substrate tap located in the buried oxide layer and the silicon device layer, the first and second substrate taps in contact with the bulk Si substrate, and an initial depletion region located in the bulk Si substrate below the buried oxide layer and associated with at least one of the first substrate tap and the second substrate tap, the first substrate tap and the second substrate tap configured to increase the initial depletion region based on an applied bias voltage. |
申请公布号 |
WO2016018774(A1) |
申请公布日期 |
2016.02.04 |
申请号 |
WO2015US42161 |
申请日期 |
2015.07.27 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
STULEMEIJER, JIRI;DEN DEKKER, ARNOLD;DE JONGH, MAURICE ADRIANUS |
分类号 |
H01L21/84;H01L27/12;H01L29/786 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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