发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a structure of a semiconductor device which achieves low power consumption even with increase in area, and a method of manufacturing the same.SOLUTION: A thin-film transistor of a pixel used for a screen is manufactured. In the thin-film transistor, source wiring and a gate electrode are manufactured on an identical plane. In addition, wiring for connecting the source wiring and the thin-film transistor and wiring for connecting a pixel electrode and the thin-film transistor are manufactured in an identical process.SELECTED DRAWING: Figure 14
申请公布号 JP2016021587(A) 申请公布日期 2016.02.04
申请号 JP20150176492 申请日期 2015.09.08
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;KUWABARA HIDEAKI
分类号 H01L21/288;H01L29/41;H01L29/786 主分类号 H01L21/288
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