| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A semiconductor device such as, for example an imaging sensor, includes a semiconductor layer in which, for example, a photodiode may be formed. An insulation film is disposed on a surface of the semiconductor layer. The insulation film includes one or more wirings or wiring layers formed therein. A semiconductor support substrate is disposed on the insulation film. The semiconductor support substrate includes a first layer (or region) and a second layer (or region) that is between the insulation film and the first layer. The first layer has a bulk micro defect density that is higher than a bulk micro defect density of the second layer. |
| 申请公布号 |
US2016035766(A1) |
申请公布日期 |
2016.02.04 |
| 申请号 |
US201514624221 |
申请日期 |
2015.02.17 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HONGO Satoshi;MATSUMURA Tsuyoshi;ASHIDATE Hiroaki;TANIDA Kazumasa |
| 分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A semiconductor device comprising:
a semiconductor layer; an insulation film disposed on a surface of the semiconductor layer, the insulation film including a wiring formed therein; and a semiconductor support substrate disposed on the insulation film, the semiconductor support substrate including a first layer and a second layer between the insulation film and the first layer, the first layer having a bulk micro defect density that is higher than a bulk micro defect density of the second layer. |
| 地址 |
Tokyo JP |
