SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

Both a HEMT and a SBD are formed on a nitride semiconductor substrate. The nitride semiconductor substrate comprises a HEMT gate structure region and an anode electrode region. A first laminated structure is formed at least in the HEMT gate structure region, and includes first to third nitride semiconductor layers. A second laminated structure is formed at least in a part of the anode electrode region, and includes first and second nitride semiconductor layers. The anode electrode contacts the front surface of the second nitride semiconductor layer. At least in a contact region in which the front surface of the second nitride semiconductor layer contacts the anode electrode, the front surface of the second nitride semiconductor layer is finished to be a surface by which the second nitride semiconductor layer forms a Schottky junction with the anode electrode.

主权项

1. A semiconductor device comprising:
a nitride semiconductor substrate in which both a High Electron Mobility Transistor (HEMT) and a Schottky Barrier Diode (SBD) are formed, wherein the nitride semiconductor substrate comprises:
a HEMT gate structure region where a gate structure of the HEMT is formed; andan anode electrode region where an anode electrode of the SBD is formed, wherein a first laminated structure is formed at least in the HEMT gate structure region, and includes a first nitride semiconductor layer, a second nitride semiconductor layer crystal-grown on a front surface of the first nitride semiconductor layer, and a third nitride semiconductor layer crystal-grown on a front surface of the second nitride semiconductor layer, a second laminated structure is formed at least in a part of the anode electrode region, and includes the first nitride semiconductor layer and the second nitride semiconductor layer, the anode electrode contacts the front surface of the second nitride semiconductor layer, a bandgap of the second nitride semiconductor layer is larger than a bandgap of the first nitride semiconductor layer, the third nitride semiconductor layer is p-type, and at least in a contact region in which the front surface of the second nitride semiconductor layer contacts the anode electrode, the front surface of the second nitride semiconductor layer is finished to be a surface by which the second nitride semiconductor layer forms a Schottky junction with the anode electrode.