SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE THEREOF

摘要

According to one embodiment, a semiconductor device manufacturing method provides filling a through-hole which penetrates through a first side of substrate to a second side thereof. A seed film including copper is formed on the inner wall surface of the through-hole. A first metal layer including copper is grown bottom-up from one end of the through-hole toward the other end thereof, to partially fill the through-hole, leaving a space having a depth less than the radius of the through-hole as measured from the second side surface of the substrate. A second metal layer including nickel is conformally grown in the space from the inner peripheral surface of the through-hole to a height having a summit surface protruding from the second side surface of the substrate. A third metal layer is formed on the summit surface of the second metal layer.

主权项

1. A semiconductor device manufacturing method, comprising:
forming a conductive film on a first surface of a substrate; forming a through-hole extending through the substrate from a second surface thereof to expose the conductive film on the first surface of the substrate; depositing a seed film on an inner wall of the through-hole, a surface of the conductive film exposed in the through-hole, and the second surface of the substrate; depositing a first metal layer from a first end of the through-hole adjacent to the conductive film toward a second end thereof by a bottom-up electrolytic plating method to fill a volume of the through-hole to a depth position; and depositing a second metal layer on an inner peripheral surface of the through-hole from the depth position by a conformal electrolytic plating method to forma summit surface that protrudes from the second surface.