Method for Masking a Surface Comprising Silicon Oxide

摘要

A method for masking a surface, in particular a surface having silicon oxide, aluminum or silicon, includes providing a substrate having a surface to be masked, in particular having a surface having silicon oxide, aluminum or silicon; and producing a defined masking pattern by locally selective forming of colloidal silicon oxide on the surface. The method allows for the creating of an extremely stable masking in a simple and cost-effective manner, in contrast to a plurality of etching media, in particular in contrast to hydrofluoric acid, in order to thus create extremely accurate and defined structures such as by an etching process.

主权项

1. A method for masking a surface, comprising:
locating a substrate having a surface to be masked, the surface comprising silicon oxide, aluminum, or silicon; and producing a defined masking pattern by local selective formation of colloidal silicon oxide on the surface.