| 摘要 |
Provided is a nitride semiconductor wafer in which a luminescent layer having a multiple quantum well structure, comprising a regrown nitride semiconductor, and a p-type nitride semiconductor layer are stacked on one another above a nitride semiconductor template having a nitride semiconductor layer as its uppermost layer, wherein, if a well layer that is closest to the p-type nitride semiconductor layer, from among the well layers in the luminescent layer having a multiple quantum well structure, is defined as an uppermost well layer, then a distance t from a regrowth interface of the nitride semiconductor layer in the nitride semiconductor template to the uppermost well layer is at most equal to 1 µm, and the oxygen concentration in the uppermost well layer is at most equal to 5.0 × 1016 cm-3. |
