| 摘要 |
The method is designed to produce optoelectronic semiconductor chips (1) and comprises the following steps: - growing a semiconductor layer sequence (3) on a growth substrate (2), - applying at least one metallization (4) to a contact side (34) of the semiconductor layer sequence (3), which contact side faces away from the growth substrate (2), - applying an intermediate carrier (6) to the semiconductor layer sequence (3), wherein a sacrificial layer (5) is applied between the intermediate carrier (6) and the semiconductor layer sequence (3), - removing the growth substrate (2) from the semiconductor layer sequence (3), - structuring the semiconductor layer sequence (3) into individual chip regions (33), - at least partially dissolving the sacrificial layer (5), and - subsequently removing the intermediate carrier (6). |
