| 摘要 |
PROBLEM TO BE SOLVED: To provide stable electric characteristics to a semiconductor device using an oxide semiconductor to achieve high reliability.SOLUTION: In a transistor including an oxide semiconductor film, provided is a transistor in which a metal oxide film which functions as a channel protection film and composed of a component similar to a component of the oxide semiconductor film is laminated on a top face of the oxide semiconductor film. In addition, the oxide semiconductor film used for an active layer of the transistor achieves high purity and is changed to electrical i(intrinsic) type by removing an impurity such as hydrogen, moisture, hydroxyl group and hydride from the oxide semiconductor by a heat treatment, and by supplying oxygen which is a chief component material to compose the oxide semiconductor and reduces simultaneously with the removal process of the impurity.SELECTED DRAWING: Figure 1 |
