发明名称 |
MANUFACTURING METHOD FOR A PIEZOELECTRIC LAYER ARRANGEMENT AND CORRESPONDING PIEZOELECTRIC LAYER ARRANGEMENT |
摘要 |
A manufacturing method is provided for a piezoelectric layer arrangement and a corresponding piezoelectric layer arrangement. The manufacturing method includes the steps: depositing a first electrode layer on a substrate; depositing a first insulating layer on the first electrode layer; forming a through opening in the first insulating layer to expose the first electrode layer within the through opening; depositing a piezoelectric layer on the first insulating layer and on the first electrode layer within the through opening; back-polishing the resulting structure to form a planar surface, on which a piezoelectric layer area, surrounded by the first insulating layer, is exposed; and depositing and structuring a second electrode layer on the first insulating layer, which contacts the piezoelectric layer area. |
申请公布号 |
US2016035959(A1) |
申请公布日期 |
2016.02.04 |
申请号 |
US201514814182 |
申请日期 |
2015.07.30 |
申请人 |
Robert Bosch GmbH |
发明人 |
MAYER Thomas;BUTZ Juergen;STRAUB Rainer;TOMASCHKO Jochen;SINGLE Christof |
分类号 |
H01L41/04;H01L41/113;H01L41/187;H01L41/29;H01L41/314;H01L41/337;H01L41/047;H01L41/09 |
主分类号 |
H01L41/04 |
代理机构 |
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代理人 |
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主权项 |
1. A manufacturing method for a piezoelectric layer arrangement, comprising:
depositing a first electrode layer on a substrate; depositing a first insulating layer on the first electrode layer; forming a through opening in the first insulating layer to expose the first electrode layer within the through opening; depositing a piezoelectric layer on the first insulating layer and on the first electrode layer within the through opening in order to produce a resulting structure; back-polishing the resulting structure to form a planar surface, on which a piezoelectric layer area surrounded by the first insulating layer is exposed; and depositing and structuring a second electrode layer on the first insulating layer, the second electrode layer contacting the piezoelectric layer area. |
地址 |
Stuttgart DE |