STRESS IN N-CHANNEL FIELD EFFECT TRANSISTORS

摘要

A fin field-effect transistor (FinFET) includes a gate stack on a surface of a semiconductor fin. The semiconductor fin may include a capping material and a stressor material. The stressor material is confined by the capping material to a region proximate the gate stack. The stressor material provides stress on the semiconductor fin proximate the gate stack.

主权项

1. A method for fabricating a fin field effect transistor (FinFET) device on a semiconductor substrate, comprising:
forming a gate stack on a surface of a semiconductor fin; depositing a dielectric layer on the semiconductor fin to be substantially coplanar with a surface of a conductive gate of the gate stack; recessing the conductive gate to be below a level of the dielectric layer; depositing a stressor material onto a recessed surface of the conductive gate and the dielectric layer; confining the stressor material; and changing a volume of the stressor material to stress the semiconductor fin proximate the conductive gate.