SEMICONDUCTOR STRUCTURE INCLUDING A FERROELECTRIC TRANSISTOR AND METHOD FOR THE FORMATION THEREOF

摘要

An illustrative semiconductor structure described herein includes a substrate including a logic transistor region, a ferroelectric transistor region and an input/output transistor region. A logic transistor is provided at the logic transistor region. The logic transistor includes a gate dielectric and a gate electrode. An input/output transistor is provided at the input/output transistor region. The input/output transistor includes a gate dielectric and a gate electrode. The gate dielectric of the input/output transistor has a greater thickness than the gate dielectric of the logic transistor. A ferroelectric transistor is provided at the ferroelectric transistor region. The ferroelectric transistor includes a ferroelectric dielectric and a gate electrode. The ferroelectric dielectric is arranged between the ferroelectric transistor region and the gate electrode of the ferroelectric transistor.

主权项

1. A semiconductor structure, comprising:
a substrate comprising a logic transistor region, a ferroelectric transistor region and an input/output transistor region; a logic transistor provided at said logic transistor region, said logic transistor comprising a gate dielectric and a gate electrode; an input/output transistor provided at said input/output transistor region, said input/output transistor comprising a gate dielectric and a gate electrode, said gate dielectric of said input/output transistor having a greater thickness than said gate dielectric of said logic transistor; and a ferroelectric transistor provided at said ferroelectric transistor region, said ferroelectric transistor comprising a ferroelectric dielectric and a gate electrode, said ferroelectric dielectric being arranged between said ferroelectric transistor region and said gate electrode of said ferroelectric transistor.