| 发明名称 |
COMPOUND SEMICONDUCTOR STACK AND SEMICONDUCTOR DEVICE |
| 摘要 |
There is provided a compound semiconductor stack including a substrate (101) of which electrical resistance is greater than or equal to 1×105 Ωcm, a first compound semiconductor layer (102) which is formed on the substrate (101), and contains In and Sb doped with carbon, and a second compound semiconductor layer (103) which is formed on the first compound semiconductor layer (102), has a carbon concentration less than a carbon concentration of the first compound semiconductor layer (102), and contains In and Sb. A film thickness of the first compound semiconductor layer (102) is greater than or equal to 0.005 μm and less than or equal to 0.2 μm. In addition, the carbon concentration of the first compound semiconductor layer (102) is greater than or equal to 1×1015 cm−3 and less than or equal to 5×1018 cm−3. |
| 申请公布号 |
US2016035839(A1) |
申请公布日期 |
2016.02.04 |
| 申请号 |
US201414776822 |
申请日期 |
2014.03.25 |
| 申请人 |
ASAHI KASEI MICRODEVICES CORPORATION ;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY |
发明人 |
YOSHIKAWA Akira;MORIYASU Yoshitaka;OGURA Mutsuo |
| 分类号 |
H01L29/207;H01L43/10;H01L31/0304;H01L43/06 |
主分类号 |
H01L29/207 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A compound semiconductor stack, comprising:
a substrate having electrical resistance greater than or equal to 1×105 Ωcm; a first compound semiconductor layer formed on the substrate, comprising In and Sb doped with carbon; and a second compound semiconductor layer formed on the first compound semiconductor layer, having a carbon concentration less than a carbon concentration of the first compound semiconductor layer, and comprising In and Sb, wherein a film thickness of the first compound semiconductor layer is greater than or equal to 0.005 μm and less than or equal to 0.2 μm, and the carbon concentration of the first compound semiconductor layer is greater than or equal to 1×1015 cm−3 and less than or equal to 5×1018 cm−3. |
| 地址 |
Chiyoda-ku, Tokyo JP |
