发明名称 STRUCTURES, METHODS AND APPLICATIONS FOR ELECTRICAL PULSE ANNEAL PROCESSES
摘要 Structures and methods are provided for nanosecond electrical pulse anneal processes. The method of forming an electrostatic discharge (ESD) N+/P+ structure includes forming an N+ diffusion on a substrate and a P+ diffusion on the substrate. The P+ diffusion is in electrical contact with the N+ diffusion. The method further includes forming a device between the N+ diffusion and the P+ diffusion. A method of annealing a structure or material includes applying an electrical pulse across an electrostatic discharge (ESD) N+/P+ structure for a plurality of nanoseconds.
申请公布号 US2016035717(A1) 申请公布日期 2016.02.04
申请号 US201514882549 申请日期 2015.10.14
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ABOU-KHALIL Michel J.;GAUTHIER, JR. Robert J.;LEE Tom C.;LI Junjun;MITRA Souvick;PUTNAM Christopher S.;ROBISON Robert R.
分类号 H01L27/02;H01L29/861 主分类号 H01L27/02
代理机构 代理人
主权项 1. An electrostatic discharge (ESD) N+/P+ structure comprising: an N+ diffusion on a substrate; a P+ diffusion on the substrate and in electrical contact with the N+ diffusion; and a device between the N+ diffusion and the P+ diffusion, wherein the N+ diffusion and the P+ diffusion are in a side by side relationship.
地址 Armonk NY US