发明名称 |
STRUCTURES, METHODS AND APPLICATIONS FOR ELECTRICAL PULSE ANNEAL PROCESSES |
摘要 |
Structures and methods are provided for nanosecond electrical pulse anneal processes. The method of forming an electrostatic discharge (ESD) N+/P+ structure includes forming an N+ diffusion on a substrate and a P+ diffusion on the substrate. The P+ diffusion is in electrical contact with the N+ diffusion. The method further includes forming a device between the N+ diffusion and the P+ diffusion. A method of annealing a structure or material includes applying an electrical pulse across an electrostatic discharge (ESD) N+/P+ structure for a plurality of nanoseconds. |
申请公布号 |
US2016035717(A1) |
申请公布日期 |
2016.02.04 |
申请号 |
US201514882549 |
申请日期 |
2015.10.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABOU-KHALIL Michel J.;GAUTHIER, JR. Robert J.;LEE Tom C.;LI Junjun;MITRA Souvick;PUTNAM Christopher S.;ROBISON Robert R. |
分类号 |
H01L27/02;H01L29/861 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
1. An electrostatic discharge (ESD) N+/P+ structure comprising:
an N+ diffusion on a substrate; a P+ diffusion on the substrate and in electrical contact with the N+ diffusion; and a device between the N+ diffusion and the P+ diffusion, wherein the N+ diffusion and the P+ diffusion are in a side by side relationship. |
地址 |
Armonk NY US |