| 发明名称 |
Method Of Forming A Semiconductor Device Including A Pitch Multiplication |
| 摘要 |
Disclosed herein is a manufacturing method of a semiconductor device that includes forming first and second layers over an underlying martial such that the first layer is between the underlying material and the second layer, forming a third layer over the second layer, forming first and second core portions apart from each other over the third layer, forming a gap portion between the first and the second core portions; and removing the second and the third layers by using the first and the second core portions and the gap portion as a mask to expose a part of the first layer. |
| 申请公布号 |
US2016035578(A1) |
申请公布日期 |
2016.02.04 |
| 申请号 |
US201514810711 |
申请日期 |
2015.07.28 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
LUPO Lionel |
| 分类号 |
H01L21/308;H01L21/02;H01L21/311 |
主分类号 |
H01L21/308 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming first and second layers over an underlying martial such that the first layer is between the underlying material and the second layer; forming a third layer over the second layer; forming first and second core portions apart from each other over the third layer; forming a gap portion between the first and the second core portions; and removing the second and the third layers by using the first and the second core portions and the gap portion as a mask to expose a part of the first layer. |
| 地址 |
Boise ID US |
