SPLIT-GATE SEMICONDUCTOR DEVICE WITH L-SHAPED GATE

摘要

A semiconductor device having a substrate, a dielectric layer over the substrate, a first gate conductor, an inter-gate dielectric structure and a second gate conductor is disclosed. A gate dielectric structure is disposed between the first gate conductor and the dielectric layer, and may include two or more dielectric films disposed in an alternating manner. The inter-gate dielectric structure may be disposed between the first gate conductor and the second gate conductor, and may include two or more dielectric films disposed in an alternating manner. The second gate conductor is formed in an L shape such that the second gate has a relatively low aspect ratio, which allows for a reduction in spacing between adjacent gates, while maintaining the required electrical isolation between the gates and contacts that may subsequently be formed.

主权项

1. A method of making a semiconductor device, comprising:
forming a dielectric layer on a substrate; forming a gate stack having a first gate conductor and a gate dielectric structure between the first gate conductor and the dielectric layer; forming an inter-gate dielectric structure at a sidewall of the gate stack; and forming an L-shaped second gate conductor adjacent to the inter-gate dielectric structure and on the dielectric layer, wherein a vertical portion of the L-shaped second gate conductor is located on a side of the L-shaped second gate conductor opposite from a conductive structure that is higher than at least a horizontal portion of the L-shaped second gate conductor.