METAL SEMICONDUCTOR ALLOY CONTACT RESISTANCE IMPROVEMENT

摘要

Contact openings are formed into a dielectric material exposing a surface portion of a semiconductor substrate. A first transition metal liner including at least one first transition metal element, a second transition metal liner including at least one second transition metal element that is different from the at least one first transition metal element and a metal contact are sequentially formed within each contact opening. Following a planarization process, the structure is annealed forming metal semiconductor alloy contacts at the bottom of each contact opening. Each metal semiconductor alloy contact that is formed includes the at least one first transition metal element, the at least one second transition metal element and a semiconductor element.

主权项

1. A method of forming a metal contact structure, said method comprising:
providing a structure including at least one contact opening in a dielectric material that extends to an uppermost surface of a semiconductor substrate; forming a first transition metal liner comprising at least one first transition metal element in said at least one contact opening; forming a second transition metal liner on a surface of said first transition metal liner and comprising at least one second transition metal element that is different from said at least one first transition metal element; forming a metal contact on a surface of said second transition metal liner; and annealing said structure to form a metal semiconductor alloy contact at a bottom of said at least one contact opening, wherein said metal semiconductor alloy contact forms an interface with a portion of said semiconductor substrate and comprises said at least one first transition metal element, said at least one second transition metal element and a semiconductor element of said semiconductor substrate.