| 摘要 |
An n-type layer (3) is formed on a rear surface of a Si substrate (1) by implanting an n-type impurity. A recessed section (4) is formed in the rear surface of the Si substrate (1). After forming the n-type layer (3), an oxide film (5) is formed on the rear surface and in the recessed section (4). The oxide film (5) on the rear surface is removed, while leaving the protection film in the recessed section (4). After removing the oxide film (5), an Al-Si film (6) is formed on the rear surface. A metal electrode (7) is formed on the Al-Si film (6). Next, effects of an embodiment of the present invention are explained in comparison with a comparison example. The oxide film (5) in the recessed section (4) prevents Al from diffusing into the Si substrate (1) from the Al-Si film (6) via the recessed section (4). |
