发明名称 |
MONOLITHIC INTEGRATED CIRCUIT (MMIC) STRUCTURE AND METHOD FOR FORMING SUCH STRUCTURE |
摘要 |
A method for forming a semiconductor structure having a transistor device with a control electrode for controlling a flow of carriers between a first electrode and a second electrode. A passivation layer is deposited over the first electrode, the second electrode and the control electrode. An etch stop layer is deposited on the passivation layer over the control electrode. A dielectric layer is formed over the etch stop layer. A window is etched through a selected region in the dielectric layer over the control electrode, to expose a portion of the etch stop layer disposed over the control electrode. A metal layer is formed on a portion of the etch stop layer and the dielectric layer is also formed on the metal layer. A second metal layer is deposited on the portion of the dielectric layer formed on the first mentioned metal layer. |
申请公布号 |
EP2979299(A1) |
申请公布日期 |
2016.02.03 |
申请号 |
EP20140712859 |
申请日期 |
2014.03.03 |
申请人 |
RAYTHEON COMPANY |
发明人 |
WILLIAMS, ADRIAN, D.;ALCORN, PAUL, M. |
分类号 |
H01L27/06;H01L21/8252;H01L23/29;H01L23/31;H01L29/20;H01L29/778;H01L49/02 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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