| 摘要 |
Disclosed are a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate and a MOS transistor formed on the substrate. The MOS transistor includes: a first gate insulating film formed on the substrate; a second gate insulating film formed on a side of the first gate insulating film, and thicker than the first gate insulating film; a gate electrode formed on the first and second gate insulating films; a source area formed on a surface part of the substrate, and adjacent to the first gate insulating film; and a drain area formed on a surface part of the substrate, and adjacent to the second gate insulating film. The semiconductor device and the manufacturing method are capable of improving both a breakdown voltage and a cutoff frequency. |
