CMOS DEVICE WITH COMMON STRAIN-RELAXED BUFFER AND METHOD FOR MANUFACTURING THEREOF

摘要

A CMOS semiconductor finFET device and a method for manufacturing a CMOS semiconductor finFET device are disclosed. The device comprises an n-finFET and a p-finFET with channel regions comprising Ge on a common strain-relaxed buffer layer comprising SiGe. The concentration of Ge in the channel regions is higher than the concentration of Ge in the strain-relaxed buffer layer. The device further comprises a source/drain region for the n-finFET wherein the source/drain region comprises SiGe; and a source/drain region for the p-finFET wherein the second source/drain region comprises Ge.