METHOD OF FORMING A METAL PHOSOPHATE THIN FILM BY AN ATOMIC LAYER DEPOSITION PROCESS

摘要

A method for forming a metal phosphorus oxide thin film using an atomic layer deposition process supplies metal precursor gas into a chamber to chemically adsorb a metal precursor on a target object. After removing an unreacted portion in the metal precursor gas from the chamber using first purge gas, phosphorus precursor gas containing phosphoric acid steam is supplied into the chamber to allow the metal precursor adsorbed on the target object and the phosphoric acid steam to react with each other. Subsequently, an unreacted portion in the phosphorus precursor gas and a reaction byproduct are removed from the chamber using second purge gas.