发明名称 半導体記憶装置
摘要 The purpose of the present invention is to provide a semiconductor storage device, which has small resistance in the ON state, and a small leak current in the OFF state, and which has a small-sized select transistor used therein. In this semiconductor storage device, a channel of a first select transistor that selects a memory cell array is electrically connected to each of the adjacent memory cell arrays (see FIG. 1).
申请公布号 JP5851030(B2) 申请公布日期 2016.02.03
申请号 JP20140519710 申请日期 2012.06.04
申请人 株式会社日立製作所 发明人 笹子 佳孝
分类号 H01L27/105;G11C13/00;H01L45/00 主分类号 H01L27/105
代理机构 代理人
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