| 摘要 |
<p>A method for repairing a mask for EUV exposure, which includes: a Mo/Si multi-layer film including a molybdenum layer and a silicon layer and being deposited on a substrate; a protection film formed on the Mo/Si multi-layer film; and a absorption film formed on the protection film, includes: specifying a position of a defect of the Mo/Si multi-layer film in an exposed area of the protection film where the protection film is exposed from the absorption film; and irradiating light beam, of which a diameter is narrowed down to be or less than a wavelength of EUV exposure light, onto an area covering the position of the defect in a plan view of the mask for EUV exposure to form a plurality of holes on a top surface of the mask for EUV exposure, the maximum width of the holes being equal to or less than the wavelength.</p> |
