SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

The present invention relates to a semiconductor device and a method for fabricating the same. The semiconductor device includes a substrate which includes a cell array region and a peripheral circuit region; a stacked structure which is arranged on the substrate of the cell array region, and includes electrodes and insulating layers which are alternately stacked; a plurality of peripheral gate structures which are arranged on the substrate of the peripheral circuit region, and are separated from each other in a direction; and residual spacers which are arranged on both sidewalls of the peripheral gate structures. Each of the peripheral structures includes a peripheral gate pattern on the substrate, and a peripheral gate spacer on the sidewall of the peripheral gate pattern. Each of the residual spacers includes a stacked sacrificial pattern and an insulating pattern. The insulating pattern includes the same material as the insulting layers constituting the stacked structure.