| 摘要 |
The present invention provides a transistor for controlling on/off states of electricity by having one or more bending deformations of a graphene which comprise controlling on/off states of electricity by adjusting the height of a Fermi level of one or more graphenes between one or more graphenes and a drain electrode by including one or more graphenes with one or more deformations due to a voltage of a barrier adjusting circuit crossed with a circuit of one or more graphenes selected among one or more piezo materials, magnetic particles, and particles having a charge provided in a lower part of one or more graphenes while one or more graphenes have a plane nonidentical to that of the drain electrode. |
