发明名称 |
Integrated circuit of CMOS type comprising first and second circuit parts |
摘要 |
An integrated circuit (100) of CMOS type comprises first (10) and second (20) circuit parts arranged close to one another in a single semiconducting substrate. The circuit combines using a deep doping well (2) for reducing digital noise and implementing a sleep mode for reducing power consumption. Such circuit may contain a random access memory and be a radio communication system-on-chip device. It may advantageously be used within a mobile communication apparatus such as a mobile phone. |
申请公布号 |
EP2849218(B1) |
申请公布日期 |
2016.02.03 |
申请号 |
EP20130368032 |
申请日期 |
2013.09.16 |
申请人 |
ST-ERICSSON SA |
发明人 |
TALAYSSAT, JACQUES |
分类号 |
H01L21/8238;G11C8/10;G11C11/419;H01L21/761;H01L27/092;H01L27/108;H01L27/11 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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