发明名称 Integrated circuit of CMOS type comprising first and second circuit parts
摘要 An integrated circuit (100) of CMOS type comprises first (10) and second (20) circuit parts arranged close to one another in a single semiconducting substrate. The circuit combines using a deep doping well (2) for reducing digital noise and implementing a sleep mode for reducing power consumption. Such circuit may contain a random access memory and be a radio communication system-on-chip device. It may advantageously be used within a mobile communication apparatus such as a mobile phone.
申请公布号 EP2849218(B1) 申请公布日期 2016.02.03
申请号 EP20130368032 申请日期 2013.09.16
申请人 ST-ERICSSON SA 发明人 TALAYSSAT, JACQUES
分类号 H01L21/8238;G11C8/10;G11C11/419;H01L21/761;H01L27/092;H01L27/108;H01L27/11 主分类号 H01L21/8238
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