| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vapor phase crystal growth apparatus with which memory effect is suppressed, steep material gas switching is controllable, excellent control of a composition and impurity concentration is achievable, and high-quality crystal growth with low pit density is practicable, and to provide a material gas ejector. <P>SOLUTION: The material gas ejector includes: a first material gas supply chamber and a second material gas supply chamber mounted on the upper side of the first material gas supply chamber, to which the first material gas and the second material gas are respectively supplied and which are vertically separated from each other; a cooler including a first cooling jacket mounted on the lower side of the first material gas supply chamber and being adjacent thereto and a second cooling water jacket mounted on the lower side of the first cooling jacket; a first material gas vent hole which penetrates the cooler, further communicates with the first material gas supply chamber and ejects the first material gas; and a second material gas vent hole which penetrates the cooler, further communicates with the second material gas supply chamber and ejects the second material gas. <P>COPYRIGHT: (C)2013,JPO&INPIT |
