| 摘要 |
The present invention relates to a substrate processing apparatus. The substrate processing apparatus according to an embodiment of the present invention includes a process chamber, a support unit, a gas supply unit, and a plasma generation unit. The plasma generation unit includes an upper electrode, a lower electrode and a high frequency electrode. The upper electrode includes a shower head for distributing a process gas onto a substrate. A plurality of injection holes for injecting the process gas are formed in the shower head. The longitudinal direction of the injection holes is inclined to the upper surface of the support unit, so the injection holes can adjust the injecting direction of the gas. |
