| 摘要 |
Enhancement mode III-nitride HEMT and method for manufacturing an enhancement mode III-nitride HEMT comprising: providing a substrate comprising a stack of layers on the substrate, each layer comprising a III-nitride material, and a passivation layer comprising high temperature silicon nitride overlying and in contact with an upper layer of the stack of III-nitride layers, wherein the HT silicon nitride is formed by MOCVD or LPCVD or any equivalent technique at a temperature higher than 450°C, forming a recessed gate region by removing the passivation layer only in the gate region, thereby exposing the underlying upper layer then forming a p-doped GaN layer at least in the recessed gate region, thereby filling at least partially the recessed gate region, and forming a gate contact and source/drain contacts. |
