HARDMASK COMPOSITION AND METHOD OF FORMING PATTERNING USING THE HARDMASK COMPOSITION

摘要

Provided are a hard mask composition with excellent etch resistance and a method for forming patterns using the same. The hard mask composition comprises: one or more selected from the group consisting of a two-dimensional layered nanostructure and a precursor thereof; and a solvent, wherein a content of one or more selected from the group consisting of the two-dimensional layered nanostructure and the precursor thereof is 0.01 to 40 parts by weight with respect to 100 parts by weight of the hard mask composition.