Semiconductor device and method for producing semiconductor device

摘要

A semiconductor device according to the present invention comprises a first pillar-shaped semiconductor layer, a gate insulating film formed around the first pillar-shaped semiconductor layer, a gate electrode made of a metal and formed around the gate insulating film, a gate line made of a metal and connected to the gate electrode, a second gate insulating film formed around an upper portion of the first pillar-shaped semiconductor layer, a first contact made of a second metal and formed around the second gate insulating film, a second contact which is made of a third metal and which connects an upper portion of the first contact to an upper portion of the first pillar-shaped semiconductor layer, a second diffusion layer formed in a lower portion of the first pillar-shaped semiconductor layer, a pillar-shaped resistance-changing layer formed on the second contact, a reset gate insulating film that surrounds the pillar-shaped resistance-changing layer, and a reset gate that surrounds the reset gate insulating film.

主权项

1. A semiconductor device comprising:
a first pillar-shaped semiconductor layer; a gate insulating film around the first pillar-shaped semiconductor layer; a gate electrode made of a metal around the gate insulating film; a gate line made of a metal and connected to the gate electrode; a second gate insulating film around an upper portion of the first pillar-shaped semiconductor layer; a first contact made of a second metal and around the second gate insulating film; a second contact made of a third metal and which connects an upper portion of the first contact to an upper portion of the first pillar-shaped semiconductor layer; a diffusion layer in a lower portion of the first pillar-shaped semiconductor layer; a pillar-shaped resistance-changing layer on the second contact; a reset gate insulating film that surrounds the pillar-shaped resistance-changing layer; and a reset gate that surrounds the reset gate insulating film.