| 发明名称 | Infrared multiplier for photo-conducting sensors | ||
| 摘要 | Photo-conducting infrared sensors are provided including a substrate (e.g., silicon) with one or more trenches formed on a first surface. An infrared-reflective film can be deposited directly or indirectly onto and conforming in shape with the first surface of the substrate. A lead chalcogenide film can be deposited directly or indirectly over the top of the infrared-reflective film and conforming in shape with the first surface of the substrate. Accordingly, the infrared-reflective film is directly or indirectly sandwiched between the substrate and the lead chalcogenide film. | ||
| 申请公布号 | US9252182(B2) | 申请公布日期 | 2016.02.02 |
| 申请号 | US201213603788 | 申请日期 | 2012.09.05 |
| 申请人 | Northrop Grumman Systems Corporation | 发明人 | Knight Thomas J.;Kirby Christopher F. |
| 分类号 | H01L31/0216;H01L31/0232;H01L27/146;G01J5/08 | 主分类号 | H01L31/0216 |
| 代理机构 | Alston & Bird LLP | 代理人 | Alston & Bird LLP |
| 主权项 | 1. A photo-conducting infrared sensor, comprising: (i) a substrate comprising a first surface including one or more trenches; (ii) an infrared-reflective film deposited directly or indirectly onto and conforming in shape with the first surface of the substrate; and (iii) a lead chalcogenide film deposited directly over the top of the infrared-reflective film and conforming in shape with the first surface of the substrate such that the infrared-reflective film is directly or indirectly sandwiched between the substrate and the lead chalcogenide film. | ||
| 地址 | Los Angeles CA US | ||