Memory device and method for manufacturing the same

摘要

A semiconductor structure and a method for manufacturing the same are disclosed. The semiconductor structure includes a first electrode layer, a second electrode layer and a dielectric layer between the first electrode layer and the second electrode layer. A width of the second electrode layer becomes larger in a direction away from the dielectric layer.

主权项

1. A memory device, comprising:
a first electrode layer; a second electrode layer; a dielectric layer having an ONO structure and disposed between the first electrode layer and the second electrode layer, wherein a width of the second electrode layer becomes larger in a direction away from the dielectric layer; wherein the memory device is a 3D stacked memory device comprising a plurality of stack structures each of which comprises at least one of the first electrode layer and the second electrode layer is disposed between the stack structures and on opposing sides of the first electrode layers disposed in two adjacent stack structures; and wherein the dielectric layer conformally covers on one of the stack structures and is disposed on opposing walls of the first electrode layer.