Solar cell and method for manufacturing solar cell

摘要

A solar cell includes semiconductor substrate of a first conductivity type; first semiconductor layer having a first conductivity type; second semiconductor layer having a second conductivity type; first electrode; second electrode; and insulating layer. First semiconductor layer and second semiconductor layer are formed on rear surface. When one end portion of insulating layer which is formed on first semiconductor layer and which is on a side close to first electrode is defined as first insulating-layer end portion and another end portion of insulating layer on a side close to second electrode is defined as second insulating-layer end portion in arrangement direction x, a distance from end point of second-semiconductor-layer end portion in contact with rear surface to second insulating-layer end portion in arrangement direction x is shorter than a distance from end point to first insulating-layer end portion in arrangement direction x.

主权项

1. A solar cell comprising:
a semiconductor substrate of a first conductivity type having a light-receiving surface and a rear surface; a first semiconductor layer having the first conductivity type on the rear surface; a second semiconductor layer having a second conductivity type on the rear surface; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; and an insulating layer having insulation properties, wherein the second semiconductor layer is located on the insulating layer, the second semiconductor layer physically contacting a front surface, a rear surface and a side surface of the insulating layer, the front surface of the insulating layer being substantially parallel to the rear surface of the insulating layer and being disposed further apart from the semiconductor substrate than the rear surface of the insulating layer, the first semiconductor layer and the second semiconductor layer contact each other at an interface such that the insulating layer is positioned on the interface between the first semiconductor layer and the second semiconductor layer and on both the first semiconductor layer and the second semiconductor layer, and when an end portion of the first semiconductor layer is defined as a first-semiconductor-layer end portion, an end portion of the second semiconductor layer which is adjacent to the first semiconductor layer is defined as a second-semiconductor-layer end portion, one end portion of the insulating layer which is formed on the first semiconductor layer and which is facing the first electrode is defined as a first insulating-layer end portion, and another end portion of the insulating layer facing the second electrode is defined as a second insulating-layer end portion, in an arrangement direction in which the first semiconductor layer and the second semiconductor layer are alternately arranged, a distance from an end point of the second-semiconductor-layer end portion in contact with the second insulating-layer end portion in the arrangement direction is shorter than a distance from the end point to the first insulating-layer end portion in the arrangement direction.