Display device and electronic appliance

摘要

A display device with low manufacturing cost, with low power consumption, capable of being formed over a large substrate, with a high aperture ratio of a pixel, and with high reliability is provided. The display device includes a transistor electrically connected to a light-transmitting pixel electrode and a capacitor. The transistor includes a gate electrode, a gate insulating film over the gate electrode, and a first multilayer film including an oxide semiconductor over the gate insulating film. The capacitor includes the pixel electrode and a conductive electrode formed of a second multilayer film which overlaps with the pixel electrode with a predetermined distance therebetween, and has the same layer structure as the first multilayer film. A channel formation region of the transistor is at least one layer, which is not in contact with the gate insulating film, of the first multilayer film.

主权项

1. A semiconductor device comprising:
a transistor comprising:
a first oxide layer on an insulating surface, a second oxide layer over the first oxide layer, and a third oxide layer over the second oxide layer; anda source electrode and a drain electrode electrically connected to the first oxide layer, the second oxide layer, and the third oxide layer; a silicon insulating layer containing excess oxygen over and in contact with the third oxide layer, the source electrode, and the drain electrode;
a nitride insulating layer over the silicon insulating layer; anda capacitor comprising:a first electrode in contact with the silicon insulating layer; andthe nitride insulating layer overlapping the first electrode, wherein the first oxide layer, the second oxide layer, the third oxide layer, and the first electrode comprise a same material, and wherein the second oxide layer comprises a channel formation region of the transistor.